Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5 V

Author

Saito, M. ; Ono, M. ; Fujimoto, R. ; Takahashi, C. ; Tanimoto, H. ; Ito, N. ; Ohguro, T. ; Yoshitomi, T. ; Momose, H.S. ; Iwai, H.

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

6-8 June 1995

Firstpage

71

Lastpage

72

Abstract

Low noise high-frequency analog operation of small geometry silicon MOSFETs is demonstrated. By scaling gate length down to 0.3-sub 0.1 /spl mu/m regions, excellent low noise figure of 1.5 dB at 2 GHz was obtained with low drain current of 0.3 mA//spl mu/m at f/sub T/ value of 20-65 GHz-the same level as today´s high performance silicon bipolar transistors in research level. Even at low voltage operation such as 0.5 V, extremely high cutoff frequency of 48 GHz was realized by sub 0.1 /spl mu/m gate length nMOSFETs. Such low voltage operations allow one order of magnitude smaller power consumption compared with 2 V power supply voltage.

Keywords

MOSFET; microwave field effect transistors; semiconductor device noise; silicon; 0.1 to 0.3 micron; 0.5 V; 1.5 dB; 2 GHz; 20 to 65 GHz; Si; cutoff frequency; drain current; high-frequency analog applications; low voltage operation; noise figure; power consumption; small geometry silicon MOSFETs; Bipolar transistors; Electrodes; Energy consumption; Fingers; Geometry; Low voltage; MOSFETs; Noise figure; Power supplies; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520863

Filename

520863