Title :
CVD SiN/sub X/ anti-reflective coating for sub-0.5 /spl mu/m lithography
Author :
Ong, T.P. ; Roman, B. ; Paulson, W. ; Lin, J.H. ; King, C. ; Hayden, J. ; Ku, Y.C. ; Fu, C.C. ; Luo, M. ; Philbin, C. ; Rossow, M. ; Mele, T. ; Kemp, K.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
This paper reports the investigation of low pressure chemical vapor deposition of SiN/sub X/ film for bottom antireflective coating (BARC) application in 0.35 /spl mu/m lithography and below. The SiN/sub X/ material was successfully designed to provide excellent anti-reflective layer which meets various advanced device integration requirements. This BARC process has been found to be manufacturable for deep-UV and I-line lithography.
Keywords :
antireflection coatings; chemical vapour deposition; integrated circuit technology; light reflection; photolithography; silicon compounds; 0.35 micron; BARC process; CVD; I-line lithography; SiN; bottom antireflective coating; deep-UV lithography; device integration requirements; low pressure chemical vapor deposition; Chemical vapor deposition; Coatings; Distributed control; Lithography; Manufacturing processes; Optical films; Optical refraction; Optical variables control; Reflectivity; Silicon compounds;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520864
