DocumentCode
3034290
Title
Analysis of critical dimension control for optical-, EB-, and X-ray lithography below the 0.2-/spl mu/m region
Author
Fukuda, H. ; Okazaki, S.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
1995
fDate
6-8 June 1995
Firstpage
77
Lastpage
78
Abstract
Critical dimension (CD) control for optical-, EB-, and X-ray lithography is analyzed. In the 0.1 to 0.2-/spl mu/m region, processing factors such as diffusion of chemical species in resist films and mask edge accuracy become dominant. These make it difficult to achieve this scale with sufficient CD control even with post-optical lithography methods.
Keywords
X-ray lithography; electron beam lithography; photolithography; 0.1 to 0.2 micron; EB lithography; X-ray lithography; chemical diffusion; critical dimension control; mask edge; optical lithography; resist films; Chemicals; Equations; Interference; Optical control; Optical films; Optical imaging; Optical sensors; Resists; Stimulated emission; X-ray lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
0-7803-2602-4
Type
conf
DOI
10.1109/VLSIT.1995.520866
Filename
520866
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