Fabrication of a 1.3-μm-wavelength multiple-quantum-well laser on a (211)A InP substrate

We demonstrate crystal growth (MOVPE) and fabrication of a long-wavelength laser on a (211)A InP substrate, with the expectation of reducing threshold current density by applying substrates of (n11) surface orientation. We examined sample InGaAs(P) SQWs of various thickness. We found that InGaAsP SQWs could be fabricated with good optical properties provided the SQW layers were not made too thin. However, the properties of the InGaAs SQWs tended to be degraded probably due to the difficulty of exchanging group-V gases at the heterointerfaces. A laser that had an unstrained InGaAsP/InGaAsP MQW active layer emitting at 1.3-μm was fabricated on a (211)A substrate. Its threshold current density was 900 A/cm², which is comparable to the value for the same type of laser on a (100) substrate. These results suggest that long-wavelength lasers with satisfactory quality can be fabricated on a (211)A substrate