Title :
Large-signal FET models and a new AlGaN/GaN HFET model for power amplifier design
Author :
Trew, R.J. ; Hou, Dong ; Schimizzi, R. ; Goswami, Anshuman ; Bilbro, Griff L.
Author_Institution :
ECE Dept., North Carolina State Univ., Raleigh, NC, USA
Abstract :
A historical review of large-signal compact FET models is presented. Device models used in circuit design typically are based upon equivalent circuit techniques. However, it is possible to develop physics-based compact models. In this work, a new physics-based model for AlGaN/GaN HFETs that can be integrated into the commercial simulators is described. The new model has demonstrated good agreement between measured and simulated data for communications band power amplifiers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power amplifiers; AlGaN-GaN; HFET model; circuit design; commercial simulator; communication band power amplifier; device model; equivalent circuit technique; large-signal compact FET model; power amplifier design; Equivalent circuits; HEMTs; Integrated circuit modeling; MODFETs; Mathematical model; Numerical models;
Conference_Titel :
Wireless Information Technology and Systems (ICWITS), 2012 IEEE International Conference on
Conference_Location :
Maui, HI
Print_ISBN :
978-1-4673-0947-9
DOI :
10.1109/ICWITS.2012.6417696
