Title :
Increasing the sensitivity of FGMOS dosimeters by reading at higher temperature
Author :
McNulty, Peter J. ; Poole, Kelvin F.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., Clemson, SC, USA
Abstract :
UVPROM devices programmed as dosimeters exhibit a linear dependence on the temperature maintained during the read operation. Raising the temperature lowers the absorbed dose per bit flip. This exposes latent measurements of lower absorbed doses, thus extending the dynamic range of the devices by two or more orders of magnitude.
Keywords :
MOSFET; dosimeters; radiation hardening (electronics); FGMOS dosimeters; FGMOS transistors; UVPROM devices; lower absorbed doses; Arrays; Nonvolatile memory; Sensitivity; Temperature dependence; Temperature measurement; Temperature sensors; Transistors; FGMOS transistors; Radiation Effects; UVPROM devices; dosimetry;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131431
