DocumentCode
3034621
Title
Increasing the sensitivity of FGMOS dosimeters by reading at higher temperature
Author
McNulty, Peter J. ; Poole, Kelvin F.
Author_Institution
Dept. of Phys. & Astron., Clemson Univ., Clemson, SC, USA
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
615
Lastpage
619
Abstract
UVPROM devices programmed as dosimeters exhibit a linear dependence on the temperature maintained during the read operation. Raising the temperature lowers the absorbed dose per bit flip. This exposes latent measurements of lower absorbed doses, thus extending the dynamic range of the devices by two or more orders of magnitude.
Keywords
MOSFET; dosimeters; radiation hardening (electronics); FGMOS dosimeters; FGMOS transistors; UVPROM devices; lower absorbed doses; Arrays; Nonvolatile memory; Sensitivity; Temperature dependence; Temperature measurement; Temperature sensors; Transistors; FGMOS transistors; Radiation Effects; UVPROM devices; dosimetry;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131431
Filename
6131431
Link To Document