Comparison of on-wafer multiline TRL and LRM+ calibrations for RF CMOS applications

Author

Rumiantsev, Andrej ; Sweeney, Susan L. ; Corson, Phillip L.

Author_Institution

SUSS MicroTec Test Syst. GmbH, Sacka

fYear

2008

fDate

9-12 Dec. 2008

Firstpage

132

Lastpage

136

Abstract

This paper presents a quantitative comparison of the reference multiline TRL and LRM+ for a customized set of standards in a CMOS process using IBM´s 0.13 mum technology. This comparison was undertaken for the first time and covered a frequency range from 1 to 110 GHz. It was demonstrated that the accuracy of the on-wafer multiline TRL and LRM+ calibration were in very good agreement. Both methods outperform the conventional off-wafer calibration with the DUT contact pad parasitics de-embedded.

Keywords

CMOS integrated circuits; S-parameters; calibration; error correction; field effect MIMIC; field effect MMIC; integrated circuit measurement; integrated circuit testing; microwave measurement; DUT contact pad; IBM technology; LRM+ calibration; RF CMOS applications; de-embedding method; device under test; error correction; frequency 1 GHz to 110 GHz; frequency scattering parameter measurement; off-wafer calibration; on-wafer multiline TRL calibration; size 0.13 mum; CMOS process; CMOS technology; Calibration; Conductivity measurement; NIST; Probes; Radio frequency; Scattering parameters; Silicon; Testing; CMOS; calibration; calibration comparison; deembedding; error correction; scattering parameters measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Measurement Symposium, 2008 72nd ARFTG

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-2300-2

Electronic_ISBN

978-1-4244-2300-2

Type

conf

DOI

10.1109/ARFTG.2008.4804291

Filename

4804291