DocumentCode :
3034623
Title :
Comparison of on-wafer multiline TRL and LRM+ calibrations for RF CMOS applications
Author :
Rumiantsev, Andrej ; Sweeney, Susan L. ; Corson, Phillip L.
Author_Institution :
SUSS MicroTec Test Syst. GmbH, Sacka
fYear :
2008
fDate :
9-12 Dec. 2008
Firstpage :
132
Lastpage :
136
Abstract :
This paper presents a quantitative comparison of the reference multiline TRL and LRM+ for a customized set of standards in a CMOS process using IBM´s 0.13 mum technology. This comparison was undertaken for the first time and covered a frequency range from 1 to 110 GHz. It was demonstrated that the accuracy of the on-wafer multiline TRL and LRM+ calibration were in very good agreement. Both methods outperform the conventional off-wafer calibration with the DUT contact pad parasitics de-embedded.
Keywords :
CMOS integrated circuits; S-parameters; calibration; error correction; field effect MIMIC; field effect MMIC; integrated circuit measurement; integrated circuit testing; microwave measurement; DUT contact pad; IBM technology; LRM+ calibration; RF CMOS applications; de-embedding method; device under test; error correction; frequency 1 GHz to 110 GHz; frequency scattering parameter measurement; off-wafer calibration; on-wafer multiline TRL calibration; size 0.13 mum; CMOS process; CMOS technology; Calibration; Conductivity measurement; NIST; Probes; Radio frequency; Scattering parameters; Silicon; Testing; CMOS; calibration; calibration comparison; deembedding; error correction; scattering parameters measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurement Symposium, 2008 72nd ARFTG
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-2300-2
Electronic_ISBN :
978-1-4244-2300-2
Type :
conf
DOI :
10.1109/ARFTG.2008.4804291
Filename :
4804291
Link To Document :
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