Boron as a primary source of radiation in high density DRAMs

Author

Baumann, R. ; Hossain, T. ; Smith, E. ; Murata, S. ; Kitagawa, H.

Author_Institution

ULSI Technol. Center, Texas Instrum. Japan Ltd., Ibaraki, Japan

fYear

1995

fDate

6-8 June 1995

Firstpage

81

Lastpage

82

Abstract

The interaction of cosmic ray thermal neutrons and boron is demonstrated as the primary source of radiation in devices containing borophosphosilicate glass (BPSG). Simulations indicated that this source of radiation generates enough charge to induce soft errors in memory devices. The results of a study of DRAM devices also demonstrated that this radiation is capable of inducing soft errors. A simple process change that significantly reduces this source of radiation is proposed.

Keywords

DRAM chips; boron compounds; borosilicate glasses; cosmic ray interactions; cosmic ray neutrons; errors; neutron effects; phosphosilicate glasses; B2O3-P2O5-SiO2; BPSG; boron; borophosphosilicate glass; cosmic ray thermal neutrons; high density DRAMs; memory devices; radiation source; simulation; soft errors; Alpha particles; Boron; Glass; Instruments; Monitoring; Neutrons; Particle beams; Random access memory; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520868

Filename

520868