DocumentCode :
3034676
Title :
Boron as a primary source of radiation in high density DRAMs
Author :
Baumann, R. ; Hossain, T. ; Smith, E. ; Murata, S. ; Kitagawa, H.
Author_Institution :
ULSI Technol. Center, Texas Instrum. Japan Ltd., Ibaraki, Japan
fYear :
1995
fDate :
6-8 June 1995
Firstpage :
81
Lastpage :
82
Abstract :
The interaction of cosmic ray thermal neutrons and boron is demonstrated as the primary source of radiation in devices containing borophosphosilicate glass (BPSG). Simulations indicated that this source of radiation generates enough charge to induce soft errors in memory devices. The results of a study of DRAM devices also demonstrated that this radiation is capable of inducing soft errors. A simple process change that significantly reduces this source of radiation is proposed.
Keywords :
DRAM chips; boron compounds; borosilicate glasses; cosmic ray interactions; cosmic ray neutrons; errors; neutron effects; phosphosilicate glasses; B2O3-P2O5-SiO2; BPSG; boron; borophosphosilicate glass; cosmic ray thermal neutrons; high density DRAMs; memory devices; radiation source; simulation; soft errors; Alpha particles; Boron; Glass; Instruments; Monitoring; Neutrons; Particle beams; Random access memory; Silicon; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
Type :
conf
DOI :
10.1109/VLSIT.1995.520868
Filename :
520868
Link To Document :
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