• DocumentCode
    303486
  • Title

    An apparatus to investigate the effects of hot electrons in the aging of polyethylene cables

  • Author

    Cloutier, Pierre ; Sanche, Léon

  • Author_Institution
    Fac. de Med., Sherbrooke Univ., Que., Canada
  • Volume
    1
  • fYear
    1996
  • fDate
    16-19 Jun 1996
  • Firstpage
    377
  • Abstract
    It is now established that the aging of organic insulators due to DC or AC voltage stresses involves the interaction of hot electrons within the dielectric and/or at the electrodes. In order to study the details of this aging process in industrial devices, the authors have recently developed an apparatus to probe charge accumulation induced by hot (i.e., low-energy) electrons of very well-defined energies near the surface of thin film samples of cables or other products made of organic dielectric materials. In an ultrahigh vacuum chamber, a monochromatic (ΔE≈60 meV) pulsed electron-beam (10-14-10-12 C/pulse) of variable energy (0-20 eV) impinges on a sample film of about 100 μm thickness. Both electron transmission through, and charge accumulation into, the film are monitored as a function of incident electron energy. An ultraviolet source allows discharge of the sample. The apparatus is described and preliminary results of such measurements are reported for samples cut from polyethylene cables
  • Keywords
    ageing; cable insulation; cable testing; electric breakdown; hot carriers; insulation testing; polyethylene insulation; 0 to 20 eV; ageing tests; charge accumulation; electrodes; electron transmission; hot electrons; incident electron energy; insulation breakdown tests; low-energy electrons; measurements; organic dielectric materials; polyethylene cable insulation; ultraviolet source; voltage stresses; Aging; Cables; Dielectric thin films; Dielectrics and electrical insulation; Electrodes; Electrons; Probes; Stress; Thin film devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation, 1996., Conference Record of the 1996 IEEE International Symposium on
  • Conference_Location
    Montreal, Que.
  • ISSN
    1089-084X
  • Print_ISBN
    0-7803-3531-7
  • Type

    conf

  • DOI
    10.1109/ELINSL.1996.549360
  • Filename
    549360