Title :
Statistical variations of integrated circuits radiation hardness
Author :
Kalashnikov, Oleg A.
Author_Institution :
Specialized Electron. Syst. (SPELS), Nat. Res. Nucl. Univ. (NRNU) "MEPHI", Moscow, Russia
Abstract :
Analysis of total dose failure level variations of different manufacturer´s integrated circuits is presented. More than double difference of failure levels within a lot and between lots proved to be rather typical. The variations distribution for different manufacturers is presented.
Keywords :
failure analysis; integrated circuit reliability; radiation hardening (electronics); statistical analysis; statistical distributions; integrated circuit radiation hardness; statistical variations; total dose failure level variation analysis; EPROM; Histograms; Integrated circuits; Manufacturing processes; Production facilities; Silicon; Voltage control; Integrated circuits; Radiation hardness; Statistical variation; Total dose;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131443
