Analysis of SOI CMOS microprocessor´s SEE sensitivity: Correlation of the results obtained by different test methods

Author

Gorbunov, Maxim S. ; Vasilegin, Boris V. ; Antonov, Andrey A. ; Osipenko, Pavel N. ; Zebrev, Gennady I. ; Anashin, Vasily S. ; Emeliyanov, Vladimir V. ; Ozerov, Alexander I. ; Useinov, Rustem G. ; Chumakov, Alexander I. ; Pechenkin, Alexander A. ; Yanenko

Author_Institution

Comput. Eng. Dept., Sci. Res. Inst. of Syst. Anal., Moscow, Russia

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

665

Lastpage

668

Abstract

The results on SEE sensitivity of 0.5 μm SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and ²⁵²Cf fission source) is provided for the cache. The possible sources of discrepancies between test results and the ways of data correction and methods of testing techniques´ accuracy improvement are discussed.

Keywords

CMOS digital integrated circuits; integrated circuit testing; microprocessor chips; radiation hardening (electronics); sensitivity analysis; silicon-on-insulator; SOI CMOS microprocessor SEE sensitivity analysis; data correction; particle accelerator; pulsed laser technique; single-event effect analysis; size 0.5 mum; test methods; Laser modes; Layout; Logic gates; Microprocessors; Radiation effects; Transistors; CMOS; Cf-252; SEE; SOI; heavy ions; laser; microprocessor;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131444

Filename

6131444