Title :
Low damage reactive ion etching process for fabrication of ridge waveguide lasers
Author :
Qiu, B.C. ; Ooi, B.S. ; Bryce, A.C. ; Hicks, S.E. ; Wilkinson, C.D.W. ; De La Rue, R.M. ; Marsh, J.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
The damage produced during CH4/H2 reactive ion etching (RIE) processes has been measured using low temperature photoluminescence. The damage depth profile was estimated and a low level damage RIE process has been developed. The process has been used to fabricate InGaAs/InGaAsP ridge waveguide lasers containing 5 quantum wells with threshold currents, 43-45 mA for 500 μm lasers, that are indistinguishable from those of wet-etched devices
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; ion beam effects; optical fabrication; photoluminescence; quantum well lasers; ridge waveguides; semiconductor technology; sputter etching; waveguide lasers; 20 to 100 W; 43 to 45 mA; 5 quantum wells; 500 mum; CH4/H2 reactive ion etching; InGaAs-InGaAsP; InGaAs/InGaAsP ridge waveguide lasers; damage depth profile; fabrication; low damage reactive ion etching process; low level damage RIE process; low temperature photoluminescence; ridge waveguide lasers; threshold currents; Chemical lasers; Dry etching; Hydrogen; Optical device fabrication; Optical waveguides; Optoelectronic devices; Photoluminescence; Plasma measurements; Waveguide lasers; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600232
