DocumentCode
3035036
Title
Dielectric properties of sputter-deposited BaTiO3-SrTiO 3 thin films
Author
Miyasaka, Yoichi ; Matsubara, Shogo
Author_Institution
NEC Corp., Kawasaki, Japan
fYear
1990
fDate
6-8 Jun 1990
Firstpage
121
Lastpage
124
Abstract
The dielectric properties of (Ba1-x, Srx)TiO 3 thin films prepared by RF-magnetron sputtering were studied in terms of film composition and substrate temperature. The dielectric constant ε increased with increasing substrate temperature and depended on the Sr content x . A typical ε value for both SrTiO3 (x =1) and BaTiO3 (x =0) was about 250 on the films prepared at around 550°C. The dependence of ε on composition revealed maxima at x =0.5. The peak ε value depended on the preparation temperature of the target powder and ranged from 500 to 870 for films deposited at 600°C. With increasing measurement temperature, the ε value increased slightly in BaTiO3 and decreased in compositions with x >0.1. A peak of ε was observed only on the films with x =0.5 and having a ε value higher than 800. The peak was located at around -10°C and was very broad. A (Ba0.7Sr 0.3)TiO3 film prepared at 500°C showed a ε of 220 and a temperature coefficient of -70 ppm/°C
Keywords
barium compounds; ferroelectric thin films; permittivity; sputter deposition; stoichiometry; strontium compounds; 500 to 870 K; Ba1-xSrxTiO3; RF-magnetron sputtering; composition; dielectric constant; dielectric properties; ferroelectrics; film composition; preparation temperature; thin films; Breakdown voltage; Capacitance; Crystallization; Dielectric measurements; Dielectric substrates; Dielectric thin films; Frequency; Powders; Sputtering; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location
Urbana-Champaign, IL
Print_ISBN
0-7803-0190-0
Type
conf
DOI
10.1109/ISAF.1990.200208
Filename
200208
Link To Document