DocumentCode :
3035348
Title :
Unexpected charge losses from the floating gates of eeprom memory cells
Author :
Allinger, Robert ; Kerber, Martin ; Mattausch, Hans Jürgen ; Braun, Helga
Author_Institution :
Siemens AG
fYear :
1996
fDate :
1996
Firstpage :
92
Lastpage :
99
Keywords :
Charge measurement; Current measurement; EPROM; Electric variables measurement; Electrons; Loss measurement; Manufacturing; Nonvolatile memory; Temperature; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Technology, Design and Testing, 1996. Records of the 1996 IEEE International Workshop on
ISSN :
1087-4852
Print_ISBN :
0-8186-7466-0
Type :
conf
DOI :
10.1109/MTDT.1996.782498
Filename :
782498
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3035348
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