Welcome from the general chair

On behalf of the entire IEDM committee, I would like to welcome you to the 2011 IEEE International Electron Devices Meeting to be held December 5–7, 2011 in Washington, DC. The IEDM continues to be the world´s premier venue for presenting the latest breakthroughs and the broadest and best technical information in electronic device technologies. This year we have a strong collection of both contributed and invited papers that will be presented by industrial and academic leaders and students from around the world. Short summaries of each paper are available on the IEDM web site, which we encourage everyone to visit - http://www.ieee.org/conference/iedm. This year, we reorganized our subcommittee and established two new subcommittees. Recognizing the success of special track on “device/circuit interaction” in the past three years, we established a new subcommittee named CDI (Circuit and Device Interaction). This new subcommittee covers device and circuit scaling issues, technology-circuit co-optimization, power-performance-area analysis, impact of future device structures on circuit design, and manufacturability issues such as DFM and process control, in addition to CMOS platform technology. Another one is NDT (Nano Device Technology) established by merging two subcommittees, CDT (CMOS Device Technology) and SSN (Solid-State Nano devices). NDT covers all the topics of nano-scale devices including both silicon and carbon based devices, nanowires, nanotubes, and quantum dot. Spintronic, other non charge based devices, NEMS-based logic devices and molecular devices are also covered. Again this year, we will continue to distribute an abbreviated digest at the meeting, along with electronic versions of the complete abstracts, to more effectively leverage modern electronic content distribution capabilities. The full digest will be available on the IEEE Xplore website and the DVD package offered by the IEEE Electron Devices Society after the conferenc- - e.