Title :
The evolution of scaling from the homogeneous era to the heterogeneous era
Author_Institution :
Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA
Abstract :
Traditional MOSFET scaling served our industry well for more than three decades by providing continuous improvements in transistor performance, power and cost. This was the era of homogeneous scaling where similar materials and device structures were scaled from generation to generation and served a wide range of integrated circuits from memory to logic applications. Traditional scaling ran out of steam in the early 2000s due mainly to the inability to further scale the SiO2 gate oxide and this ushered in the beginning of the heterogeneous era where new materials and new device structures are being continually introduced to deliver the expected benefits of scaling. Going forward, an ever wider range of device types will be needed and the challenge we face is how to identify, develop and manufacture these revolutionary devices, and also how to integrate heterogeneous devices into compelling products.
Keywords :
MOSFET; silicon compounds; MOSFET scaling; SiO2; device structures; gate oxide; heterogeneous devices; heterogeneous era scaling; homogeneous era scaling; integrated circuits; transistor performance; High K dielectric materials; Logic gates; Metals; Performance evaluation; Silicon; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131469