DocumentCode :
3035475
Title :
A device for ultrasound dosimetry based upon a PZT/Si composite
Author :
Busse, L.J. ; Dietz, D.R.
Author_Institution :
Tetrad Corp., Englewood, CO, USA
fYear :
1990
fDate :
6-8 Jun 1990
Firstpage :
237
Lastpage :
240
Abstract :
The authors discuss the development of a composite structure of lead zirconate-titanate (PZT) and silicon which can be used to measure the local intensity or total power associated with a complex acoustic field. In the composite structure, the interaction between the electric fields induced by an acoustic wave in the piezoelectric component couples to the charge carriers in the semiconductor component. It is possible to tailor the material properties and dimensions of the individual components to optimize the acousto-electric response
Keywords :
acoustic field; acoustic wave effects; acoustoelectric effects; composite materials; dosimeters; elemental semiconductors; ferroelectric devices; ferroelectric materials; lead compounds; piezoelectric materials; silicon; ultrasonic devices; ultrasonic measurement; PZT; PbZrO3TiO3-Si; acoustic wave; acousto-electric response; charge carriers; complex acoustic field; component dimensions; composite structure; device; electric fields; interaction; local intensity; material properties; piezoelectric component couples; semiconductor component; total power; ultrasound dosimetry; Acoustic devices; Acoustic measurements; Acoustic waves; Charge carriers; Dosimetry; Material properties; Power measurement; Silicon; Ultrasonic imaging; Ultrasonic variables measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
Type :
conf
DOI :
10.1109/ISAF.1990.200232
Filename :
200232
Link To Document :
بازگشت