Wet thermal oxidation of AlInAs and AlAsSb alloys lattice-matched to InP

Author

Legay, P. ; Petit, P. ; Debray, J.P. ; Kohl, A. ; Patriarche, G. ; Le Roux, G. ; Juhel, M. ; Quillec, M.

Author_Institution

Lab. de Bagneux, CNET, Bagneux, France

fYear

1997

fDate

11-15 May 1997

Firstpage

586

Lastpage

589

Abstract

The wet thermal oxidation of AlAsSb and AlInAs lattice-matched to InP is investigated. The oxidation kinetics are determined as a function of temperature and oxidation duration for both materials. The Al content in the material is found to modify the kinetics: the higher it is, the lower the oxidation temperature which can be used. Both oxides are characterised by optical and electron microscopy, by SIMS and by X-ray diffraction. High oxidation selectivity towards the other materials is obtained with AlAsSb. However, an interfacial layer, composed of pure Sb and As and textured on InP, forms during the oxidation process. In contrast, during AlInAs oxidation, such interfacial layer do not form but the oxidation selectivity is not so good. Finally, the electrical characteristics of the AlAsSb oxide are determined

Keywords

III-V semiconductors; MIS structures; X-ray diffraction; aluminium compounds; electrical resistivity; electron microscopy; indium compounds; optical microscopy; oxidation; secondary ion mass spectra; semiconductor technology; AlAsSb; AlInAs; InP; SIMS; VCSEL application; X-ray diffraction; electrical characteristics; electron microscopy; interfacial layer; kinetics; lattice-matching; optical microscopy; oxidation duration; oxidation kinetics; oxidation selectivity; oxidation temperature; temperature dependence; wet thermal oxidation; Electron microscopy; Electron optics; Indium phosphide; Kinetic theory; Optical diffraction; Optical materials; Optical microscopy; Oxidation; Temperature; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600234

Filename

600234