Title :
Relaxor ceramic dielectric materials for multilayer ceramic capacitors
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The formation of a perovskite structure of lead zinc niobate (PZN) has been accomplished by multi-ion substitution. Nine different low-firing-type dielectric materials for a multilayer ceramic capacitor, based on modified PZN with K values ranging from 18000 to 400, were developed. The PZN-based dielectrics have 1.5 times larger K values in the same temperature coefficient of capacitance, high electrical resistivity, low dissipation factor, and low DC bias dependency, compared to conventional BaTiO3-based dielectrics
Keywords :
capacitors; ceramics; electronic conduction in insulating thin films; ferroelectric devices; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; DC bias dependency; PbZn0.33O3Nb0.66O3; capacitance; dissipation factor; electrical resistivity; ferroelectric ceramic; low-firing-type dielectric materials; modified PZN; multi-ion substitution; multilayer ceramic capacitor; perovskite structure; relaxor materials; temperature coefficient; Capacitors; Ceramics; Dielectric materials; Firing; Grain size; High K dielectric materials; High-K gate dielectrics; Iron; Nonhomogeneous media; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
DOI :
10.1109/ISAF.1990.200233
