Title :
Graphene technology with inverted-T gate and RF passives on 200 mm platform
Author :
Han, Shu-Jen ; Valdes-Garcia, Alberto ; Bol, Ageeth A. ; Franklin, Aaron D. ; Farmer, Damon ; Kratschmer, Ernst ; Jenkins, Keith A. ; Haensch, Wilfried
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Wafer-scale graphene devices processed entirely in a standard 200 mm silicon fab are demonstrated for the first time. New embedded gate structures enable full saturation of the drain current in graphene FETs with sub-μm channels, resulting in high intrinsic voltage gain. In addition, passive devices were monolithically integrated with graphene transistors to form the first GHz-range graphene IC using large-scale CVD graphene. The demonstration of high performance graphene FETs and IC fabricated using a 200 mm platform is a major step in transitioning this promising material from a scientific curiosity into a real technology.
Keywords :
field effect transistors; graphene; wafer-scale integration; FET; IC; RF; high intrinsic voltage gain; inverted-T gate; large-scale CVD graphene; size 200 nm; sub-μm channels; wafer-scale graphene devices; Dielectrics; FETs; Frequency measurement; Integrated circuits; Logic gates; Passivation; Radio frequency;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131473