• DocumentCode
    3035627
  • Title

    Sintering of lead titanate and titano-zirconate sol-gel thin films

  • Author

    Gaucher, P. ; Lequien, S. ; Ganne, J.P. ; Faure, S. ; Barboux, P.

  • Author_Institution
    Thomson-CSF, Orsay, France
  • fYear
    1990
  • fDate
    6-8 Jun 1990
  • Firstpage
    267
  • Lastpage
    270
  • Abstract
    Alkoxides of titanium and zirconium with lead acetate or 2-ethyl hexanoate have been used to obtain precursors of lead titanate (PT) and titanozirconate (PZT) in several solvants with additional ligands. Stable sols are spin-coated on single-crystal substrates used in microelectronics, dried to obtain a gel precursor, and fired at temperatures between 500 and 700°C. The stability conditions of the sols are described, with emphasis on the important role of viscosity. The evolution of the gel with temperature was followed by thermogravimetric analysis (TGA) and high temperature X-ray diffraction (XRD). The TGA experiments showed that decomposition rates are strongly dependent on the raw material used and the reflux conditions. The XRD experiments showed that crystallization of the phase occurs between 500 and 600°C. The thickness of the films and the grain size have been derived from scanning electron microscopy observation. The ferroelectric hysteresis loops were measured with a Sawyer-tower circuit
  • Keywords
    X-ray diffraction examination of materials; crystallisation; decomposition; dielectric hysteresis; ferroelectric thin films; grain size; lead compounds; scanning electron microscope examination of materials; sintering; sol-gel processing; thermal analysis; 2-ethyl hexanoate; 500 to 700 degC; PT; PZT; PbTiO3; PbZrO3TiO3; SEM; Sawyer-tower circuit; TGA; XRD; alkoxides; crystallization; decomposition rates; drying; ferroelectric hysteresis loops; film thickness; firing; gel evolution; gel precursor; grain size; high temperature X-ray diffraction; lead acetate; ligands; microelectronics; precursors; reflux conditions; scanning electron microscopy; single-crystal substrates; sintering; solvants; spin-coating; stability conditions; stable sols; temperature dependence; thermogravimetric analysis; viscosity; Microelectronics; Raw materials; Stability; Temperature; Titanium compounds; Transistors; Viscosity; X-ray diffraction; X-ray scattering; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
  • Conference_Location
    Urbana-Champaign, IL
  • Print_ISBN
    0-7803-0190-0
  • Type

    conf

  • DOI
    10.1109/ISAF.1990.200239
  • Filename
    200239