DocumentCode :
3035692
Title :
Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond
Author :
Lee, S.H. ; Park, H.C. ; Kim, Myung Su ; Kim, Hyungwook ; Choi, M.R. ; Lee, H.G. ; Seo, Jae Woo ; Kim, Scott C. ; Kim, S.G. ; Hong, S.B. ; Lee, S.Y. ; Lee, Ji Ung ; Kim, Yong Sin ; Kim, Kwang Soon ; Kim, Jong In ; Lee, M.Y. ; Shin, H.S. ; Chae, S.J. ; Son
Author_Institution :
R & D Div., Hynix Semicond. Inc., Icheon, South Korea
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
We successfully developed highly scalable and cost-effective PCRAM technology based on 0.007um2 (4F2, 84nm pitch) sized novel cell scheme. The chip size and density are 33.207mm2 and 1Gb. The device functionality and reliability were clearly demonstrated through fully integrated chip, which showed a promising feasibility for productive NVM applications.
Keywords :
random-access storage; NVM; cell scheme; full chip operation; high productive PCRAM technology platform; integrated chip; Computer architecture; Microprocessors; Phase change random access memory; Programming; Resistance; Sensors; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131480
Filename :
6131480
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3035692
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