• DocumentCode
    3035692
  • Title

    Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond

  • Author

    Lee, S.H. ; Park, H.C. ; Kim, Myung Su ; Kim, Hyungwook ; Choi, M.R. ; Lee, H.G. ; Seo, Jae Woo ; Kim, Scott C. ; Kim, S.G. ; Hong, S.B. ; Lee, S.Y. ; Lee, Ji Ung ; Kim, Yong Sin ; Kim, Kwang Soon ; Kim, Jong In ; Lee, M.Y. ; Shin, H.S. ; Chae, S.J. ; Son

  • Author_Institution
    R & D Div., Hynix Semicond. Inc., Icheon, South Korea
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    We successfully developed highly scalable and cost-effective PCRAM technology based on 0.007um2 (4F2, 84nm pitch) sized novel cell scheme. The chip size and density are 33.207mm2 and 1Gb. The device functionality and reliability were clearly demonstrated through fully integrated chip, which showed a promising feasibility for productive NVM applications.
  • Keywords
    random-access storage; NVM; cell scheme; full chip operation; high productive PCRAM technology platform; integrated chip; Computer architecture; Microprocessors; Phase change random access memory; Programming; Resistance; Sensors; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131480
  • Filename
    6131480
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3035692