Title :
Stripe direction dependence in selective area growth of InGaAsP using TBP and TBA
Author :
Kim, In ; Choi, Won-Jin ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
We employ tertiarybutyl-phosphine (TBP) and tertiarybutylarsine (TBA) as phosphorous and arsenic sources, respectively, for SAG of InP and InGaAsP. These sources enable us to maintain a relatively low V/III ratio of ~20 even under reduced pressure (76 Torr) MOCVD growth at 640°C. With the growth rates which are not extremely low compared to conventional growth, the growth surface profile by SAG using the [110]-stripe is studied and their ultimate limit is presented. Also, the alternative [11_0] direction is investigated and the control of the growth over the SiNx adjacent to the selectively opened area is presented. Also, based on the experimental observations, the mechanism leading to the differences in these directions are presented
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor growth; surface diffusion; surface topography; 640 degC; 76 torr; InGaAsP; InP; SiN; TBA; TBP; [110]-stripe; arsenic source; growth control; growth rates; growth surface profile; phosphorous source; reduced pressure MOCVD growth; relatively low V/III ratio; selective area growth; stripe direction dependence; surface flatness; surface migration; tertiarybutyl-phosphine; tertiarybutylarsine; ultimate limit; Epitaxial growth; Indium phosphide; MOCVD; Photonic band gap; Protection; Scanning electron microscopy; Silicon compounds; Thickness measurement; Waveguide discontinuities;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600236
