Low quiescent current linear regulator using combination structure of bandgap and error amplifier

Author

Han-Xiao Du ; Xin-Quan Lai ; Cong Liu ; Yuan Chi

Author_Institution

Key Lab. of High-Speed Circuit Design & EMC, Xidian Univ., Xi´an, China

Volume

50

Issue

10

fYear

2014

fDate

May 8 2014

Firstpage

771

Lastpage

773

Abstract

A low quiescent current low dropout linear regulator (LDR) with a combination structure of a bandgap and an error amplifier is presented. The circuitry is achieved with a combined structure which is able to obtain a lower quiescent current, because the current for the specific bandgap reference can be omitted. The transient response enhancement circuit can activate an additional path to control the gate voltage of the pass device which assists in monitoring the variation in the output voltage in the steady state. According to restrictions of the process and the product requirements, this proposed LDR is implemented with high-voltage tolerance double-diffused MOS (DMOS) in a 0.6 μm BCD process. The LDR has a quiescent current of 3 μA and is able to deliver a 50 mA load current.

Keywords

BIMOS integrated circuits; MOS analogue integrated circuits; amplifiers; transient response; voltage control; BCD process; DMOS; LDR; bandgap amplifier; combination structure; current 3 muA; current 50 mA; error amplifier; gate voltage control; high-voltage tolerance double-diffused MOS; low quiescent current low dropout linear regulator; size 0.6 mum; specific bandgap reference; transient response enhancement circuit;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.4277

Filename

6824064