DocumentCode
3035926
Title
Overcoming carbon nanotube variations through co-optimized technology and circuit design
Author
Zhang, Jie ; Patil, Nishant ; Wong, H. -S Philip ; Mitra, Subhasish
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
5-7 Dec. 2011
Abstract
CNT variations substantially degrade CNFET benefits. Our framework for joint exploration and optimization of CNT processing and CNFET circuit design is required to overcome this significant challenge. We present multiple CNT processing routes, which optimize multiple processing parameters together with design techniques, to achieve highly energy-efficient CNFET circuits with minimal impact of variations. Such multiple routes are essential for a successful CNFET technology to avoid potential obstacles. Our framework can be adapted for advanced nodes with proper device models, and also for a wide variety of processing techniques (e.g., CNT sorting [16]).
Keywords
carbon nanotube field effect transistors; delays; semiconductor device models; CNFET circuit design; carbon nanotube variations; circuit delay variations; co-optimized technology; CNTFETs; Correlation; Delay; Integrated circuit modeling; Layout; Logic gates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131490
Filename
6131490
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