• DocumentCode
    3035926
  • Title

    Overcoming carbon nanotube variations through co-optimized technology and circuit design

  • Author

    Zhang, Jie ; Patil, Nishant ; Wong, H. -S Philip ; Mitra, Subhasish

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    CNT variations substantially degrade CNFET benefits. Our framework for joint exploration and optimization of CNT processing and CNFET circuit design is required to overcome this significant challenge. We present multiple CNT processing routes, which optimize multiple processing parameters together with design techniques, to achieve highly energy-efficient CNFET circuits with minimal impact of variations. Such multiple routes are essential for a successful CNFET technology to avoid potential obstacles. Our framework can be adapted for advanced nodes with proper device models, and also for a wide variety of processing techniques (e.g., CNT sorting [16]).
  • Keywords
    carbon nanotube field effect transistors; delays; semiconductor device models; CNFET circuit design; carbon nanotube variations; circuit delay variations; co-optimized technology; CNTFETs; Correlation; Delay; Integrated circuit modeling; Layout; Logic gates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131490
  • Filename
    6131490