Title :
Tensile fracture behavior of single crystal silicon film having a notch of sub-micron-length
Author :
Li, Xueping ; Kasai, Takashi ; Ando, Taeko ; Shikida, Mitsuhiro ; Sato, Kazuo
Author_Institution :
Dept. of Micro Syst. Eng., Nagoya Univ., Japan
fDate :
31 Oct.-3 Nov. 2004
Abstract :
Here presented a work for investigating the fracture behavior of single crystal silicon film having a notch of sub-micron-length by tensile test. The specimens are 5 μm thickness, 100 μm length and 50 μm width, with different surface orientations and tensile direction. A focused ion beam (FIB) process was used to form a notch on one edge of the specimen and the notch size ranged from 0.1 to 1.0 μm. The fracture behavior of the specimens showed variety in this test. The fracture toughness, KIC, in the plane strain state, was constant for notch length above 0.5 μm, approximately 1.0 and 2.0 MPa·√m for the <110> and <100> tensile axes, respectively. On the other hand, when the notch length is below 0.5 μm, it is scattered and the specimen untidily fractured, indicating size limitation effect of notch. And the preferred fracture orientations also showed anisotropy when notch length is above 0.5 μ, i.e., on {110} plane in the <110> direction, or on {1111} plane in the <112> direction, initiated from notch tips.
Keywords :
elemental semiconductors; focused ion beam technology; fracture; fracture toughness; semiconductor thin films; silicon; 0.1 m to 1.0 micron; 100 micron; 5 micron; 50 micron; Si; anisotropy; focused ion beam; fracture toughness; notch size; plane strain state; preferred fracture orientations; single crystal film; size limitation effect; surface orientations; tensile axes; tensile fracture; tensile test; Atomic force microscopy; Crystalline materials; Mechanical factors; Micromechanical devices; Semiconductor films; Silicon; Surface cracks; Tensile stress; Testing; Thin film devices;
Conference_Titel :
Micro-Nanomechatronics and Human Science, 2004 and The Fourth Symposium Micro-Nanomechatronics for Information-Based Society, 2004. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8607-8
DOI :
10.1109/MHS.2004.1421277