Title :
Highly reliable 45-nm-half-pitch Cu interconnects incorporating a Ti/TaN multilayer barrier
Author :
Hamada, Masakazu ; Ohmori, Kazuyuki ; Mori, Kenichi ; Kobori, Etsuyoshi ; Suzumura, Naohito ; Etou, Ryuji ; Maekawa, Kazuyoshi ; Fujisawa, Masahiko ; Miyatake, Hiroshi ; Ikeda, Atsushi
Author_Institution :
Semicond. Co., Panasonic Corp., Nagaokakyo, Japan
Abstract :
A Ti/TaN multi-layer can achieve a highly reliable Cu interconnect with a porous SiOC (ELK; k <; 2.5) structure. Ti shows good wettability with Cu and unique properties with extreme low-k (ELK)-structured interconnects. On the other hand, Ta is known to be an effective barrier to Cu diffusion. We confirmed that the Ti barrier is different from the Ta barrier from the viewpoint of metal-oxide behavior and improved electromigration (EM) and stress migration (SM). In addition, the time-dependent dielectric breakdown (TDDB) characteristic can be improved by using a Ti barrier combined with a TaN barrier.
Keywords :
copper; electric breakdown; electromigration; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; tantalum compounds; titanium; Cu-SiOC; TDDB characteristic; Ti-TaN; electromigration; extreme low-k-structured interconnects; metal-oxide behavior; multilayer barrier; reliable interconnect; size 45 nm; stress migration; time-dependent dielectric breakdown; wettability; Annealing; Electrical resistance measurement; Electrons; Integrated circuit interconnections; Moisture; Nonhomogeneous media; Oxidation; Samarium; Semiconductor device reliability; Testing;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510594
