DocumentCode
3036205
Title
Investigation of stress induced voiding and electromigration phenomena on direct copper bonding interconnects for 3D integration
Author
Taïbi, R. ; Cioccio, L. Di ; Chappaz, C. ; Francou, M. ; Dechamp, J. ; Larre, P. ; Moreau, S. ; Chapelon, L.-L. ; Fortunier, R.
Author_Institution
STMicroelectron., Crolles, France
fYear
2011
fDate
5-7 Dec. 2011
Abstract
We investigate for the first time the reliability of the direct copper bonding process. Electromigration (EM) and Stress Induced Voiding (SIV) tests are performed on intensive 30000 daisy chains and emphasize the good behaviour facing the risk of reliability issues in Cu/Cu bonded interconnects achieved by a direct low temperature (200°C) bonding. Furthermore, a comparison between stand alone and bonded device shows that the metallic bonding interfaces do not impact on the failure mechanism during EM tests.
Keywords
electromigration; integrated circuit interconnections; integrated circuit reliability; three-dimensional integrated circuits; 3D integration; direct copper bonding interconnects; electromigration phenomena; reliability; stress induced voiding; Annealing; Bonding; Copper; Reliability; Resistance; Stress; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131502
Filename
6131502
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