Advances, challenges and opportunities in 3D CMOS sequential integration

Author

Batude, P. ; Vinet, M. ; Previtali, B. ; Tabone, C. ; Xu, C. ; Mazurier, J. ; Weber, O. ; Andrieu, F. ; Tosti, L. ; Brevard, L. ; Sklenard, B. ; Coudrain, P. ; Bobba, S. ; Ben Jamaa, H. ; Gaillardon, P-E ; Pouydebasque, A. ; Thomas, O. ; Le Royer, C. ; Ha

Author_Institution

CEA- leti, Grenoble, France

fYear

2011

fDate

5-7 Dec. 2011

Abstract

3D sequential integration enables the full use of the third dimension thanks to its high alignment performance. In this paper, we address the major challenges of 3D sequential integration: in particular, the control of molecular bonding allows us to obtain pristine quality top active layer. With the help of Solid Phase Epitaxy, we can match the performance of top FET, processed at low temperature (600°C), with the bottom FET devices. Finally, the development of a stable salicide enables to retain bottom performance after top FET processing. Overcoming these major technological issues offers a wide range of applications.

Keywords

CMOS integrated circuits; field effect transistors; integrated circuit design; solid phase epitaxial growth; three-dimensional integrated circuits; 3D CMOS sequential integration; FET devices; high alignment performance; molecular bonding; solid phase epitaxy; Bonding; FETs; Hafnium compounds; Logic gates; Silicon; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131506

Filename

6131506