DocumentCode
3036299
Title
Effect of magnesium in KOH solution on anisotropic wet etching of silicon
Author
Tanaka, Hiroshi ; Di Cheng ; Inoue, Kazuyuki ; Shikida, Mitsuhiro ; Sato, Kazuo
Author_Institution
Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Japan
fYear
2004
fDate
31 Oct.-3 Nov. 2004
Firstpage
121
Lastpage
125
Abstract
Etching characteristics of Si in KOH solution containing Mg are investigated. Etch rate of silicon slightly decreases by the Mg on the order of 10 ppm in 32 wt.% KOH, while the etched surface roughness does not change in contrast to Cu as an impurity. The surface roughening caused by the ppb-level of Cu in KOH solution can be fully recovered by adding Mg on the order of 10 ppm in the solution.
Keywords
copper; elemental semiconductors; etching; magnesium; potassium compounds; silicon; surface roughness; Cu; KOH; Mg; Si; anisotropic wet etching; etch rate; etching characteristics; surface roughening; surface roughness; Anisotropic magnetoresistance; Impurities; Magnesium; Microstructure; Research and development; Rough surfaces; Sensor phenomena and characterization; Silicon; Surface roughness; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro-Nanomechatronics and Human Science, 2004 and The Fourth Symposium Micro-Nanomechatronics for Information-Based Society, 2004. Proceedings of the 2004 International Symposium on
Print_ISBN
0-7803-8607-8
Type
conf
DOI
10.1109/MHS.2004.1421288
Filename
1421288
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