Title :
Effect of magnesium in KOH solution on anisotropic wet etching of silicon
Author :
Tanaka, Hiroshi ; Di Cheng ; Inoue, Kazuyuki ; Shikida, Mitsuhiro ; Sato, Kazuo
Author_Institution :
Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Japan
fDate :
31 Oct.-3 Nov. 2004
Abstract :
Etching characteristics of Si in KOH solution containing Mg are investigated. Etch rate of silicon slightly decreases by the Mg on the order of 10 ppm in 32 wt.% KOH, while the etched surface roughness does not change in contrast to Cu as an impurity. The surface roughening caused by the ppb-level of Cu in KOH solution can be fully recovered by adding Mg on the order of 10 ppm in the solution.
Keywords :
copper; elemental semiconductors; etching; magnesium; potassium compounds; silicon; surface roughness; Cu; KOH; Mg; Si; anisotropic wet etching; etch rate; etching characteristics; surface roughening; surface roughness; Anisotropic magnetoresistance; Impurities; Magnesium; Microstructure; Research and development; Rough surfaces; Sensor phenomena and characterization; Silicon; Surface roughness; Wet etching;
Conference_Titel :
Micro-Nanomechatronics and Human Science, 2004 and The Fourth Symposium Micro-Nanomechatronics for Information-Based Society, 2004. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8607-8
DOI :
10.1109/MHS.2004.1421288
