Title :
Investigation of Dark Current Random Telegraph Signal in Pinned PhotoDiode CMOS Image Sensors
Author :
Goiffon, Vincent ; Virmontois, Cédric ; Magnan, Pierre
Author_Institution :
Image Sensor Res. Team, Univ. de Toulouse, Toulouse, France
Abstract :
The characteristics of Dark Current Random Telegraph Signal (DC-RTS), observed in Pinned PhotoDiode (PPD) CMOS Image Sensors (CIS), are investigated thanks to a dedicated analysis tool. Our results demonstrate, for the first time in PPD CIS, that this DC-RTS is due to meta-stable oxide interface SRH generation centers located in the transfer gate depletion region.
Keywords :
CMOS image sensors; photodiodes; telegraphy; dark current random telegraph signal; dedicated analysis tool; meta-stable oxide interface SRH generation centers; pinned photodiode CMOS image sensors; transfer gate depletion region; Correlation; Dark current; Electric fields; Logic gates; Noise; Photodiodes; Random access memory;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131514
