DocumentCode :
3036736
Title :
Properties of PZT multilayer actuators
Author :
Lubitz, K. ; Hellebrand, H.
Author_Institution :
Siemens AG, Munich, Germany
fYear :
1990
fDate :
6-8 Jun 1990
Firstpage :
502
Lastpage :
512
Abstract :
PZT (lead zirconate titanate) multilayer actuators have small volume, fast response, low power consumption, and low driving voltage. The fabrication of such parts, however, has some limitations. The use of AgPd for inner electrodes allows maximum sintering temperatures of only about 1100°C. This can be achieved by a modified ceramic process and by the choice of appropriate material compositions. The internal stresses due to the combination of piezoactive layers and thin metal electrodes have to be minimized by suitable geometric design. Bimorph or plate actuators operated in the length extensional mode have an appropriate geometry so that the influence of the multilayer technology on the piezoelectric properties can be studied. These properties are given as a function of the number and thickness of the PZT layers. By comparison with calculated values the separate influence of the internal electrodes can be shown. Data for bimorph actuators with 30-μm PZT layers and with a driving voltage down to 9 V are presented
Keywords :
internal stresses; lead compounds; piezoelectric actuators; sintering; 1100 C; 30 micron; 9 V; PZT; PbZrO3TiO3; bimorph actuators; driving voltage; internal stresses; length extensional mode; modified ceramic process; multilayer actuators; piezoactive layers; power consumption; response; sintering temperatures; thickness; thin metal electrodes; Actuators; Ceramics; Composite materials; Electrodes; Energy consumption; Fabrication; Low voltage; Nonhomogeneous media; Temperature; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
Type :
conf
DOI :
10.1109/ISAF.1990.200301
Filename :
200301
Link To Document :
بازگشت