Title :
MOVPE-based localized epitaxial growth techniques and its applications
Author :
Moerman, I. ; Van Caenegem, T. ; Van Daele, P. ; Demeester, P.
Author_Institution :
INTEC, Ghent Univ., Belgium
Abstract :
As the functionality of InP-based photonic integrated circuits (PICs) is increasing rapidly and a wider range of components is integrated on a single chip, there is a need for advanced epitaxial techniques which enable the formation of regions with different bandgap energy simultaneously in a single epitaxial growth step. In this paper two MOVPE-based technologies which have the potential to meet those requirements are reviewed: selective area growth (SAG) and shadow masked growth (SMG)
Keywords :
III-V semiconductors; indium compounds; integrated optics; optical fabrication; semiconductor growth; vapour phase epitaxial growth; InGaAs-InP; InP; InP-based photonic integrated circuits; MOVPE-based localized epitaxial growth techniques; bandgap energy; selective area growth; shadow masked growth; single epitaxial growth step; Bonding; Dielectric substrates; Epitaxial growth; Indium phosphide; Inductors; Information technology; Integrated circuit technology; Photonic band gap; Photonic integrated circuits; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600240
