Role of dissipative quantum transport in DC, RF, and self-heating characteristics of short channel graphene FETs

We developed a dissipative quantum transport simulator for graphene transistors, which has the capabilities to model Klein band to band tunneling and dissipative phonon scattering process simultaneously. Simulation of DC I-V characteristics indicates that device physics of carrier scattering in short channel graphene transistors can be qualitatively different from established scattering theory of nanotransistors due to the interplay of Klein tunneling and scattering processes. Analysis of high-frequency performance of graphene FETs indicates that the high frequency performance strongly depends on the phonon energy, emphasizing the importance of engineering substrate and gate insulator for achieving optimum high-frequency performance of graphene FETs. The role of self-heating effects are also modeled and discussed for aggressively scaled graphene FETs.