Title :
Novel oxynitridation technology for highly reliable thin dielectrics
Author :
Moon-Sig Joo ; Seok-Hee Lee ; Seok-Kiu Lee ; Byung-Jin Cho ; Jong-Choul Kim ; Soo-Han Choi
Author_Institution :
Semicond. R&D Lab., Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea
Abstract :
A new oxynitridation technology is introduced. The oxynitride gate dielectric was grown in light wet ambient by diluting NH/sub 3/ gas in N/sub 2/O using a low pressure furnace. The oxide growth rate could be enhanced by this technique. The electrical properties of the oxide were improved by hardening of both SiO2 bulk and Si/SiO2 interface with in-situ post N/sub 2/O annealing. This technology is very promising for gate dielectrics in next generation DRAM and Flash EEPROM devices.
Keywords :
annealing; dielectric thin films; nitridation; oxidation; semiconductor technology; silicon compounds; N/sub 2/O; NH/sub 3/; Si-SiO/sub 2/; SiON; annealing; electrical properties; gate dielectrics; hardening; low pressure furnace; oxynitridation technology; reliability; wet oxidation; Dielectrics; EPROM; Electron traps; Furnaces; Hydrogen; Nitrogen; Oxidation; Semiconductor device reliability; Stress; Very large scale integration;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520880
