• DocumentCode
    3037023
  • Title

    Conducting mechanism of atom switch with polymer solid-electrolyte

  • Author

    Okamoto, K. ; Tada, M. ; Sakamoto, T. ; Miyamura, M. ; Banno, N. ; Iguchi, N. ; Hada, H.

  • Author_Institution
    Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    Low-temperature characterization has been performed on atom switch to clarify conducting mechanism determining the device performance. The low resistive state (<;400Ω) shows metallic conduction accompanied with a high residual resistance. In the high resistive state (>;108Ω), the resistance exponentially decreases with temperature based on Poole-Frenkel (P-F) conduction. In the intermediate range (105~107Ω), the resistance has small temperature dependence and the current is suppressed at the low-voltage regime due to the charging effect at Cu residues in a solid-electrolyte. The polymer solid-electrolyte (PSE) with forming-free operation enables the complete collection of the Cu residues without destroying the electrolyte, which is essential for the atom switch to keep a high OFF/ON resistance ratio.
  • Keywords
    MOSFET; Poole-Frenkel effect; electric resistance; field effect transistor switches; low-power electronics; polymer electrolytes; solid electrolytes; OFF/ON resistance ratio; P-F conduction; Poole-Frenkel conduction; atom switch; charging effect; conducting mechanism; copper residues; device performance determination; forming-free operation; low-temperature characterization; metallic conduction; polymer solid electrolyte; residual resistance; resistive state; Copper; Resistance; Switches; Temperature; Temperature dependence; Temperature measurement; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131538
  • Filename
    6131538