DocumentCode :
3037023
Title :
Conducting mechanism of atom switch with polymer solid-electrolyte
Author :
Okamoto, K. ; Tada, M. ; Sakamoto, T. ; Miyamura, M. ; Banno, N. ; Iguchi, N. ; Hada, H.
Author_Institution :
Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
Low-temperature characterization has been performed on atom switch to clarify conducting mechanism determining the device performance. The low resistive state (<;400Ω) shows metallic conduction accompanied with a high residual resistance. In the high resistive state (>;108Ω), the resistance exponentially decreases with temperature based on Poole-Frenkel (P-F) conduction. In the intermediate range (105~107Ω), the resistance has small temperature dependence and the current is suppressed at the low-voltage regime due to the charging effect at Cu residues in a solid-electrolyte. The polymer solid-electrolyte (PSE) with forming-free operation enables the complete collection of the Cu residues without destroying the electrolyte, which is essential for the atom switch to keep a high OFF/ON resistance ratio.
Keywords :
MOSFET; Poole-Frenkel effect; electric resistance; field effect transistor switches; low-power electronics; polymer electrolytes; solid electrolytes; OFF/ON resistance ratio; P-F conduction; Poole-Frenkel conduction; atom switch; charging effect; conducting mechanism; copper residues; device performance determination; forming-free operation; low-temperature characterization; metallic conduction; polymer solid electrolyte; residual resistance; resistive state; Copper; Resistance; Switches; Temperature; Temperature dependence; Temperature measurement; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131538
Filename :
6131538
Link To Document :
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