Title :
Physical mechanisms of endurance degradation in TMO-RRAM
Author :
Chen, B. ; Lu, Y. ; Gao, B. ; Fu, Y.H. ; Zhang, F.F. ; Huang, P. ; Chen, Y.S. ; Liu, L.F. ; Liu, X.Y. ; Kang, J.F. ; Wang, Y.Y. ; Fang, Z. ; Yu, H.Y. ; Li, X. ; Wang, X.P. ; Singh, N. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
We report, for the first time, three types of endurance failure behaviors in TMO based RRAM. New physical mechanisms are proposed to clarify the physical origins of these endurance failures. A physically-based optimized switching mode is developed to improve the endurance of TMO-RRAM. A significantly enhanced endurance of >;109 switching cycles was demonstrated in the HfOx/TiOx/HfOx/TiOx devices.
Keywords :
hafnium compounds; random-access storage; titanium compounds; HfOx-TiOx-HfOx-TiOx; TMO based RRAM; endurance failure behaviors; physical mechanisms; physically-based optimized switching mode; resistive random access memory; transitional metal oxide; Degradation; Electrical resistance measurement; Hafnium compounds; Ions; Resistance; Switches; Voltage measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131539
