DocumentCode
3037056
Title
Application of PVC to significantly improve the success rate in locating trench defect using FIB after electrical failure localization
Author
Zakaria, Nordin
Author_Institution
Infineon Technol. (Kulim), Kulim, Malaysia
fYear
2013
fDate
15-19 July 2013
Firstpage
103
Lastpage
106
Abstract
The paper outlines the application of passive voltage contrast (PVC) to significantly improve the success rate of 100% in locating trench defect especially gate oxide rupture using FIB after electrical failure localization. With this methodology, it enhances analysis throughput and accuracy without the need of having high resolution FIB.
Keywords
fault location; focused ion beam technology; integrated circuit interconnections; integrated circuit testing; isolation technology; metallisation; FIB; PVC; analysis throughput; electrical failure localization; gate oxide rupture; passive voltage contrast; success rate; trench defect location; Decision support systems; Failure analysis; Integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599135
Filename
6599135
Link To Document