Title :
Application of PVC to significantly improve the success rate in locating trench defect using FIB after electrical failure localization
Author_Institution :
Infineon Technol. (Kulim), Kulim, Malaysia
Abstract :
The paper outlines the application of passive voltage contrast (PVC) to significantly improve the success rate of 100% in locating trench defect especially gate oxide rupture using FIB after electrical failure localization. With this methodology, it enhances analysis throughput and accuracy without the need of having high resolution FIB.
Keywords :
fault location; focused ion beam technology; integrated circuit interconnections; integrated circuit testing; isolation technology; metallisation; FIB; PVC; analysis throughput; electrical failure localization; gate oxide rupture; passive voltage contrast; success rate; trench defect location; Decision support systems; Failure analysis; Integrated circuits;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599135
