Statistical characterization of current paths in narrow poly-Si channels

Author

Degraeve, R. ; Toledano-Luque, M. ; Suhane, A. ; Van den Bosch, G. ; Arreghini, A. ; Tang, B. ; Kaczer, B. ; Roussel, Ph ; Kar, G.S. ; Van Houdt, J. ; Groeseneken, G.

Author_Institution

imec, Leuven, Belgium

fYear

2011

fDate

5-7 Dec. 2011

Abstract

A statistical evaluation of current-voltage characteristics in small-size vertical poly-Si channels is used to study the poly-Si conduction properties and defects. Three poly-Si process options are considered. It is shown how defects and grain boundaries lead to percolation current paths, modulated by electron charging. Low mobility in microcrystalline-Si can be exchanged for higher mobility in large-grain poly-Si, at the expense of larger variability.

Keywords

elemental semiconductors; grain boundaries; percolation; silicon; statistics; Si; current path; current-voltage characteristic; electron charging; grain boundaries; low mobility; microcrystalline silicon; narrow poly-Si channel; percolation current path; poly-Si conduction property; poly-Si process; small-size vertical poly-Si channel; statistical characterization; Current measurement; Electron traps; Logic gates; Silicon; Temperature measurement; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131540

Filename

6131540