Title :
Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials
Author :
Li, Jing ; Luan, Binquan ; Hsu, T.H. ; Zhu, Y. ; Martyna, G. ; Newns, D. ; Cheng, H.Y. ; Raoux, S. ; Lung, H.L. ; Lam, C.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
In this paper, we developed a theory to explain the physical origins of drift mechanism in amorphous Germanium (Ge), antimony (Sb), and tellurium (Te) ternary alloys (GST). The interrelationship between atomic structure and electrical characteristics were extensively studied by first principle ab initio method and material/device characterization. The proposed method provides an effective guidance to develop drift-insensitive phase change material.
Keywords :
amorphous semiconductors; antimony alloys; atomic structure; germanium alloys; phase change materials; phase change memories; tellurium alloys; Ge; Sb; Te; amorphous germanium; atomic structure; drift-insensitive phase change material; electrical characteristics; first principle ab initio method; material-device characterization; phase change memory; resistance drift; tellurium ternary alloys; Conductivity; Phase change materials; Phase change memory; Programming; Resistance; Temperature measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131541
