Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials

Author

Li, Jing ; Luan, Binquan ; Hsu, T.H. ; Zhu, Y. ; Martyna, G. ; Newns, D. ; Cheng, H.Y. ; Raoux, S. ; Lung, H.L. ; Lam, C.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2011

fDate

5-7 Dec. 2011

Abstract

In this paper, we developed a theory to explain the physical origins of drift mechanism in amorphous Germanium (Ge), antimony (Sb), and tellurium (Te) ternary alloys (GST). The interrelationship between atomic structure and electrical characteristics were extensively studied by first principle ab initio method and material/device characterization. The proposed method provides an effective guidance to develop drift-insensitive phase change material.

Keywords

amorphous semiconductors; antimony alloys; atomic structure; germanium alloys; phase change materials; phase change memories; tellurium alloys; Ge; Sb; Te; amorphous germanium; atomic structure; drift-insensitive phase change material; electrical characteristics; first principle ab initio method; material-device characterization; phase change memory; resistance drift; tellurium ternary alloys; Conductivity; Phase change materials; Phase change memory; Programming; Resistance; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131541

Filename

6131541