Title :
Extending gate dielectric scaling limit by use of nitride or oxynitride
Author :
Wang, X.W. ; Shi, Y. ; Ma, T.P. ; Cui, G.J. ; Tamagawa, T. ; Golz, J.W. ; Halpen, B.L. ; Schmitt, J.J.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
Theoretical calculations indicate that the tunneling currents in silicon nitride or oxynitride are greatly reduced compared to those in SiO/sub 2/ for equivalent oxide thicknesses (EOT) below 4 nm. Experimental results obtained on Jet Vapor Deposited (JVD) nitrides/oxynitrides are shown to verify the theoretical trend. These results suggest that extending the scaling limit well below 4 nm of EOT is possible with the JVD nitride.
Keywords :
dielectric thin films; silicon compounds; tunnelling; vapour deposited coatings; Si/sub 3/N/sub 4/; SiON; equivalent oxide thickness; gate dielectrics; jet vapor deposition; scaling limit; silicon nitride; silicon oxynitride; tunneling currents; Capacitance-voltage characteristics; Dielectric constant; Dielectric devices; Electric breakdown; Electron traps; High-K gate dielectrics; Leakage current; Semiconductor films; Silicon; Tunneling;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520881
