Title :
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
Author :
Heyns, M. ; Alian, A. ; Brammertz, G. ; Caymax, M. ; Chang, Y.C. ; Chu, L.K. ; De Jaeger, B. ; Eneman, G. ; Gencarelli, F. ; Groeseneken, G. ; Hellings, G. ; Hikavyy, A. ; Hoffmann, T.Y. ; Houssa, M. ; Huyghebaert, C. ; Leonelli, D. ; Lin, D. ; Loo, R. ;
Author_Institution :
MTM, K.U. Leuven, Leuven, Belgium
Abstract :
Over the last years there has been lots of interest in the use of germanium and III-V compounds as potential replacements for silicon channels. Germanium with its high hole mobility has attracted lots of attention for its application in advanced pMOS devices. Indium gallium arsenide compounds, with their intrinsically superior electron mobility and high saturation velocity, are considered as a candidate for nMOS devices beyond 14 nm node technology.
Keywords :
II-VI semiconductors; MOSFET; electron mobility; elemental semiconductors; gallium arsenide; germanium; hole mobility; indium compounds; Ge; III-V compounds; InGaAs; electron mobility; germanium compounds; hole mobility; indium gallium arsenide compounds; nMOS device; pMOS device; saturation velocity; Aluminum oxide; Indium gallium arsenide; Indium phosphide; Logic gates; MOS devices; Silicon; Surface treatment;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131543
