Advancing CMOS beyond the Si roadmap with Ge and III/V devices

Author

Heyns, M. ; Alian, A. ; Brammertz, G. ; Caymax, M. ; Chang, Y.C. ; Chu, L.K. ; De Jaeger, B. ; Eneman, G. ; Gencarelli, F. ; Groeseneken, G. ; Hellings, G. ; Hikavyy, A. ; Hoffmann, T.Y. ; Houssa, M. ; Huyghebaert, C. ; Leonelli, D. ; Lin, D. ; Loo, R. ;

Author_Institution

MTM, K.U. Leuven, Leuven, Belgium

fYear

2011

fDate

5-7 Dec. 2011

Abstract

Over the last years there has been lots of interest in the use of germanium and III-V compounds as potential replacements for silicon channels. Germanium with its high hole mobility has attracted lots of attention for its application in advanced pMOS devices. Indium gallium arsenide compounds, with their intrinsically superior electron mobility and high saturation velocity, are considered as a candidate for nMOS devices beyond 14 nm node technology.

Keywords

II-VI semiconductors; MOSFET; electron mobility; elemental semiconductors; gallium arsenide; germanium; hole mobility; indium compounds; Ge; III-V compounds; InGaAs; electron mobility; germanium compounds; hole mobility; indium gallium arsenide compounds; nMOS device; pMOS device; saturation velocity; Aluminum oxide; Indium gallium arsenide; Indium phosphide; Logic gates; MOS devices; Silicon; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131543

Filename

6131543