• DocumentCode
    3037193
  • Title

    High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET

  • Author

    Egard, M. ; Ohlsson, L. ; Borg, B.M. ; Lenrick, F. ; Wallenberg, R. ; Wernersson, L.-E. ; Lind, E.

  • Author_Institution
    Solid State Phys., Lund Univ., Lund, Sweden
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    In this paper we present a 55 nm gate length In0.53Ga0.47As MOSFET with extrinsic transconductance of 1.9 mS/μm and on-resistance of 199 Ωμm. The self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.
  • Keywords
    III-V semiconductors; MOCVD; MOSFET; gallium arsenide; indium compounds; wide band gap semiconductors; In0.53Ga0.47As; drain access regions; extrinsic transconductance; high transconductance self-aligned gate-last surface channel; highly doped source; low subthreshold swing; low temperature gate-last process scheme; metalorganic chemical vapor deposition regrowth; self-aligned MOSFET; size 140 nm; size 55 nm; Abstracts; Fires; Gold; HEMTs; Hafnium oxide; Logic gates; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131544
  • Filename
    6131544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3037193