Title :
Performance enhancement of p-channel InGaAs quantum-well FETs by superposition of process-induced uniaxial strain and epitaxially-grown biaxial strain
Author :
Xia, Ling ; Tokranov, Vadim ; Oktyabrsky, Serge R. ; del Alamo, Jesús A.
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We have developed a device architecture for p-channel InGaAs quantum-well field-effect transistors (QW-FETs) that incorporates uniaxial strain through a self-aligned dielectric stressor. For the first time, we demonstrate substantial enhancement in the transport characteristics of p-channel InGaAs QW-FETs through the combination of compressive uniaxial strain and compressive epitaxially grown biaxial strain. Up to 36% increase of intrinsic transconductance has been observed in devices with 2 μm gate length.
Keywords :
III-V semiconductors; dielectric materials; epitaxial growth; field effect transistors; gallium arsenide; indium compounds; quantum well devices; semiconductor growth; InGaAs; compressive epitaxially grown biaxial strain; compressive uniaxial strain; intrinsic transconductance; p-channel QW-FET; p-channel quantum-well FET; process-induced uniaxial strain superposition; self-aligned dielectric stressor; size 2 mum; FETs; Indium gallium arsenide; Logic gates; Silicon compounds; Stress; Uniaxial strain;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131547
