A microwave plasma dry etch technique for failure analysis of Cu and PdCu wire bonds strength

Author

Tan, Y.Y. ; Ng, Michael ; Khoo, J.L. ; Tan, Chee Hing ; De Silva, Chathura ; Sim, K.S.

Author_Institution

Infineon Technol. (M) Sdn. Bhd, Batu Berendam, Malaysia

fYear

2013

fDate

15-19 July 2013

Firstpage

153

Lastpage

157

Abstract

A dry etching de-capsulation method using pre-laser ablation, microwave plasma etching and diluted methane sulfonic acid cleaning to expose the Cu wire is introduced. Comparison study of wire bond strength shows that dry plasma etching is superior over wet chemical etching method. The experiment leads further to determine the characterization result of wire ball bonding strength for different bond pads and wire materials of samples produced by the two types of de-capsulation method.

Keywords

copper; copper alloys; failure analysis; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; laser ablation; lead bonding; mechanical strength; palladium alloys; sputter etching; surface cleaning; Cu; PdCu; diluted methane sulfonic acid cleaning; dry etching decapsulation method; failure analysis; microwave plasma dry etch technique; microwave plasma etching; prelaser ablation; wire ball bonding strength; wire bond strength; Chemicals; Dry etching; Materials; Plasmas; Wires; Cu; PdCu; plasma etching; pull strength; shear strength;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599144

Filename

6599144