DocumentCode :
3037295
Title :
A microwave plasma dry etch technique for failure analysis of Cu and PdCu wire bonds strength
Author :
Tan, Y.Y. ; Ng, Michael ; Khoo, J.L. ; Tan, Chee Hing ; De Silva, Chathura ; Sim, K.S.
Author_Institution :
Infineon Technol. (M) Sdn. Bhd, Batu Berendam, Malaysia
fYear :
2013
fDate :
15-19 July 2013
Firstpage :
153
Lastpage :
157
Abstract :
A dry etching de-capsulation method using pre-laser ablation, microwave plasma etching and diluted methane sulfonic acid cleaning to expose the Cu wire is introduced. Comparison study of wire bond strength shows that dry plasma etching is superior over wet chemical etching method. The experiment leads further to determine the characterization result of wire ball bonding strength for different bond pads and wire materials of samples produced by the two types of de-capsulation method.
Keywords :
copper; copper alloys; failure analysis; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; laser ablation; lead bonding; mechanical strength; palladium alloys; sputter etching; surface cleaning; Cu; PdCu; diluted methane sulfonic acid cleaning; dry etching decapsulation method; failure analysis; microwave plasma dry etch technique; microwave plasma etching; prelaser ablation; wire ball bonding strength; wire bond strength; Chemicals; Dry etching; Materials; Plasmas; Wires; Cu; PdCu; plasma etching; pull strength; shear strength;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
ISSN :
1946-1542
Print_ISBN :
978-1-4799-1241-4
Type :
conf
DOI :
10.1109/IPFA.2013.6599144
Filename :
6599144
Link To Document :
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