Title :
Highly sensitive and reliable X-ray detector with HgI2 photoconductor and oxide drive TFT
Author :
Kim, Sun Il ; Kim, Sang Wook ; Park, Jae Chul ; Kim, Young ; Han, Sang Wook ; Kim, Ho Kyung ; Kim, Chang Jung ; Chung, U-In ; Yoo, In-Kyeong ; Kim, Kinam
Author_Institution :
Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
Abstract :
We successfully fabricated the highly sensitive and reliable X-ray flat panel detector with HgI2 photoconductor and Oxide drive TFT. The HgI2 was fabricated by screen printing of paste and various properties were tested. The HgI2 has 3 times higher sensitivity than a-Se at the applied bias below 150V. Also it shows better stability under high accumulation dose and humidity. As a drive TFT, HfInZnO oxide TFT was used and it has lower leakage current and higher mobility than a-Si TFT indicating the improvement of signal-to-noise. These are very promising results for applications in large area X-ray flat panel detector with higher X-ray sensitivity and lower dose requirement for Mammography imaging.
Keywords :
II-VI semiconductors; X-ray detection; hafnium compounds; indium compounds; leakage currents; mammography; mercury compounds; photoconducting materials; thin film transistors; wide band gap semiconductors; zinc compounds; HfInZnO; HgI2; HgI2 photoconductor; X-ray sensitivity; a-Si TFT; high accumulation dose; lower leakage current; mammography imaging; oxide drive TFT; reliable X-ray detector; reliable X-ray flat panel detector; screen printing; signal-to-noise improvement; Films; Photoconducting materials; Printing; Sensitivity; Thermal stability; Thin film transistors; X-ray imaging;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131550
