DocumentCode :
3037316
Title :
Novel approach in selective area chemical etching of copper metallization for electrical failure analysis
Author :
Lim Wei Chuan ; Binti Zakaria, Nurhanani ; Stephan, Matthew
Author_Institution :
Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia
fYear :
2013
fDate :
15-19 July 2013
Firstpage :
162
Lastpage :
165
Abstract :
The paper outlines a chemically developed method for selective area partial metal removal of copper metallization for electrical failure analysis (FA) purposes, such as micro-probing and fault isolation of power integrated circuit(IC) devices. Analysis procedures, evaluation and discussion are presented as reference.
Keywords :
copper; etching; failure analysis; fault location; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; power integrated circuits; Cu; copper metallization; electrical failure analysis; fault isolation; microprobing; power integrated circuit device; selective area chemical etching; selective area partial metal removal; Decision support systems; Failure analysis; Integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
ISSN :
1946-1542
Print_ISBN :
978-1-4799-1241-4
Type :
conf
DOI :
10.1109/IPFA.2013.6599146
Filename :
6599146
Link To Document :
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