DocumentCode
3037316
Title
Novel approach in selective area chemical etching of copper metallization for electrical failure analysis
Author
Lim Wei Chuan ; Binti Zakaria, Nurhanani ; Stephan, Matthew
Author_Institution
Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia
fYear
2013
fDate
15-19 July 2013
Firstpage
162
Lastpage
165
Abstract
The paper outlines a chemically developed method for selective area partial metal removal of copper metallization for electrical failure analysis (FA) purposes, such as micro-probing and fault isolation of power integrated circuit(IC) devices. Analysis procedures, evaluation and discussion are presented as reference.
Keywords
copper; etching; failure analysis; fault location; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; power integrated circuits; Cu; copper metallization; electrical failure analysis; fault isolation; microprobing; power integrated circuit device; selective area chemical etching; selective area partial metal removal; Decision support systems; Failure analysis; Integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599146
Filename
6599146
Link To Document