Title :
Single-grain Si TFTs using spin-coated liquid-silicon
Author :
Zhang, Jin ; Ishihara, Ryoichi ; Tagagishi, Hideyuki ; Kawajiri, Ryo ; Shimoda, Tatsuya ; Beenakker, C.I.M.
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands
Abstract :
Liquid silicon offers us an opportunity of fabricating TFTs using printed silicon, instead of printed organic materials. We have fabricated single-grain Si TFTs on location-controlled Si grains with laser crystallization of a-Si formed from spin-coated liquid Si. Si grains with a maximum grain diameter of 3.5 μm were positioned at predetermined sites. Mobilities for electrons and holes are 391 cm2/Vs and 111 cm2/Vs, respectively.
Keywords :
crystallisation; elemental semiconductors; silicon; spin coating; thin film transistors; Si; laser crystallization; location-controlled grains; single-grain TFT; size 3.5 mum; spin-coated liquid; Crystallization; Films; Grain size; Lasers; MOS devices; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131553
