High quality ultra-thin (4 nm) gate oxide by UV/O/sub 3/ surface pre-treatment of native oxide

Author

Ohkubo, S. ; Tamura, Y. ; Sugino, R. ; Nakanishi, T. ; Sugita, Y. ; Awaji, N. ; Takasaki, K.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1995

fDate

6-8 June 1995

Firstpage

111

Lastpage

112

Abstract

A significant improvement in ultra-thin (4 nm) gate oxide quality has been carried out using UV/O/sub 3/ pre-treatment of native oxide before thermal oxidation. UV/O/sub 3/ pre-treatment makes native oxide dense and close-packed without leaving any residue species. Ultra-thin gate oxide formed by UV/O/sub 3/ pre-treatment and O/sub 3/ oxidation has been found to have excellent behavior, low leakage current, low surface state density, and superior dielectric breakdown characteristics. UV/O/sub 3/ pre-treatment looks promising for using in ultra-thin gate oxidation necessary for 0.1 /spl mu/m ULSI fabrication.

Keywords

dielectric thin films; integrated circuit technology; oxidation; ozone; surface treatment; 4 nm; O/sub 3/; ULSI fabrication; UV/O/sub 3/ surface pre-treatment; dielectric breakdown; leakage current; native oxide; surface state density; thermal oxidation; ultra-thin gate oxide; Etching; Fabrication; Oxidation; Rough surfaces; Silicon; Surface contamination; Surface morphology; Surface roughness; Surface treatment; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520882

Filename

520882