A new candidate for high performance transparent electronic circuits: Sol-gel based SnO2/ZrO2 thin film transistors

We have developed a novel solution-processed transparent thin film transistor technology based on sol-gel deposited SnO₂ semiconductor and ZrO₂ dielectric layers. The entire process is fully compatible with low-cost display glass substrates, and delivered unprecedented levels of performance. Devices with saturation mobility >; 100 cm²/Vs, Subthreshold swing of ~0.3V/decade, and operating voltage <;1.5 V were demonstrated. These record results represent a tremendous improvement in performance over the state of the art, and are an important step towards realizing low-cost, large area, high-performance systems on glass.